Open access peer-reviewed chapter

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

By Malina Milanova and Petko Vitanov

Submitted: November 16th 2010Reviewed: April 30th 2011Published: November 2nd 2011

DOI: 10.5772/21800

Downloaded: 2883

© 2011 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Malina Milanova and Petko Vitanov (November 2nd 2011). Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy, Solar Cells - New Aspects and Solutions, Leonid A. Kosyachenko, IntechOpen, DOI: 10.5772/21800. Available from:

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