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Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

By Malina Milanova and Petko Vitanov

Submitted: November 16th 2010Reviewed: April 30th 2011Published: November 2nd 2011

DOI: 10.5772/21800

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Malina Milanova and Petko Vitanov (November 2nd 2011). Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy, Solar Cells - New Aspects and Solutions, Leonid A. Kosyachenko, IntechOpen, DOI: 10.5772/21800. Available from:

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