Open access peer-reviewed chapter

Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics

By Moumita Mukherjee

Submitted: June 10th 2010Reviewed: September 27th 2010Published: April 4th 2011

DOI: 10.5772/15537

Downloaded: 1632

© 2011 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike-3.0 License, which permits use, distribution and reproduction for non-commercial purposes, provided the original is properly cited and derivative works building on this content are distributed under the same license.

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Moumita Mukherjee (April 4th 2011). Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics, Properties and Applications of Silicon Carbide Rosario Gerhardt, IntechOpen, DOI: 10.5772/15537. Available from:

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