Open access peer-reviewed chapter

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

By Kazuhiro Mochizuki

Submitted: May 26th 2010Reviewed: September 9th 2010Published: April 4th 2011

DOI: 10.5772/14553

Downloaded: 3049

© 2011 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike-3.0 License, which permits use, distribution and reproduction for non-commercial purposes, provided the original is properly cited and derivative works building on this content are distributed under the same license.

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Kazuhiro Mochizuki (April 4th 2011). One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide, Properties and Applications of Silicon Carbide Rosario Gerhardt, IntechOpen, DOI: 10.5772/14553. Available from:

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