Open access peer-reviewed chapter

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

By Kazuhiro Mochizuki

Submitted: May 26th 2010Reviewed: September 9th 2010Published: April 4th 2011

DOI: 10.5772/14553

Downloaded: 3170

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Kazuhiro Mochizuki (April 4th 2011). One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide, Properties and Applications of Silicon Carbide, Rosario Gerhardt, IntechOpen, DOI: 10.5772/14553. Available from:

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