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Identification and Kinetic Properties of the Photosensitive Impurities and Defects in High-Purity Semi-Insulating Silicon Carbide

By D. V. Savchenko, B. D. Shanina and E. N. Kalabukhova

Submitted: May 20th 2010Reviewed: August 12th 2010Published: April 4th 2011

DOI: 10.5772/14302

Downloaded: 1410

© 2011 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike-3.0 License, which permits use, distribution and reproduction for non-commercial purposes, provided the original is properly cited and derivative works building on this content are distributed under the same license.

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D. V. Savchenko, B. D. Shanina and E. N. Kalabukhova (April 4th 2011). Identification and Kinetic Properties of the Photosensitive Impurities and Defects in High-Purity Semi-Insulating Silicon Carbide, Properties and Applications of Silicon Carbide Rosario Gerhardt, IntechOpen, DOI: 10.5772/14302. Available from:

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