Open access peer-reviewed chapter

Ion Synthesis of SiC and Its Instability at High Temperatures

By Kair Kh. Nussupov and Nurzhan B. Beisenkhanov

Submitted: March 6th 2012Reviewed: July 9th 2012Published: October 16th 2012

DOI: 10.5772/51389

Downloaded: 999

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Kair Kh. Nussupov and Nurzhan B. Beisenkhanov (October 16th 2012). Ion Synthesis of SiC and Its Instability at High Temperatures, Physics and Technology of Silicon Carbide Devices Yasuto Hijikata, IntechOpen, DOI: 10.5772/51389. Available from:

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