Open access peer-reviewed chapter

Conductance Deep-Level Transient Spectroscopic Study of 4H- SiC MESFET and Traps

By Malek Gassoumi and Hassen Maaref

Submitted: March 7th 2012Reviewed: July 2nd 2012Published: October 16th 2012

DOI: 10.5772/51212

Downloaded: 1262

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Malek Gassoumi and Hassen Maaref (October 16th 2012). Conductance Deep-Level Transient Spectroscopic Study of 4H- SiC MESFET and Traps, Physics and Technology of Silicon Carbide Devices Yasuto Hijikata, IntechOpen, DOI: 10.5772/51212. Available from:

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