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Characterization of Defects Evolution in Bulk SiC by Synchrotron X-Ray Imaging

Written By

T. S. Argunova, M. Yu. Gutkin, J. H. Je, V. G. Kohn and E. N. Mokhov

Submitted: 10 March 2012 Published: 16 October 2012

DOI: 10.5772/52058

From the Edited Volume

Physics and Technology of Silicon Carbide Devices

Edited by Yasuto Hijikata

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Written By

T. S. Argunova, M. Yu. Gutkin, J. H. Je, V. G. Kohn and E. N. Mokhov

Submitted: 10 March 2012 Published: 16 October 2012