Open access peer-reviewed Edited Volume

Physics and Technology of Silicon Carbide Devices

Edited by Yasuto Hijikata

Saitama University, Japan

Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.

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Physics and Technology of Silicon Carbide DevicesEdited by Yasuto Hijikata

Published: October 16th 2012

DOI: 10.5772/3428

ISBN: 978-953-51-0917-4

Copyright year: 2012

Books open for chapter submissions

35505 Total Chapter Downloads

19 Crossref Citations

25 Web of Science Citations

41 Dimensions Citations

chaptersDownloads

Open access peer-reviewed

1. Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy

By Sadafumi Yoshida, Yasuto Hijikata and Hiroyuki Yaguchi

1627

Open access peer-reviewed

2. Characterization of Defects Evolution in Bulk SiC by Synchrotron X-Ray Imaging

By T. S. Argunova, M. Yu. Gutkin, J. H. Je, V. G. Kohn and E. N. Mokhov

1575

Open access peer-reviewed

3. Ion Synthesis of SiC and Its Instability at High Temperatures

By Kair Kh. Nussupov and Nurzhan B. Beisenkhanov

1147

Open access peer-reviewed

4. Etching of Silicon Carbide Using Chlorine Trifluoride Gas

By Hitoshi Habuka

2214

Open access peer-reviewed

5. PECVD Amorphous Silicon Carbide (α-SiC) Layers for MEMS Applications

By Ciprian Iliescu and Daniel P. Poenar

2813

Open access peer-reviewed

6. Physics Behind the Ohmic Nature in Silicon Carbide Contacts

By Zhongchang Wang

1554

Open access peer-reviewed

7. Thermal Oxidation Mechanism of Silicon Carbide

By Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi and Sadafumi Yoshida

2137

Open access peer-reviewed

8. Materials and Processing for Gate Dielectrics on Silicon Carbide (SiC) Surface

By Sanjeev Kumar Gupta, Jitendra Singh and Jamil Akhtar

4653

Open access peer-reviewed

9. Fundamental Aspects of Silicon Carbide Oxidation

By Heiji Watanabe and Takuji Hosoi

3248

Open access peer-reviewed

10. Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond

By John Rozen

2478

Open access peer-reviewed

11. Conductance Deep-Level Transient Spectroscopic Study of 4H- SiC MESFET and Traps

By Malek Gassoumi and Hassen Maaref

1435

Open access peer-reviewed

12. Silicon Carbide Power MESFET

By Yintang Yang, Baoxing Duan and Xianjun Zhang

1742

Open access peer-reviewed

13. Applications of SiC-Based Thin Films in Electronic and MEMS Devices

By Mariana Amorim Fraga, Rodrigo Sávio Pessoa, Marcos Massi and Homero Santiago Maciel

3092

Open access peer-reviewed

14. High-Power Hexagonal SiC Device: A Large-Signal High- Frequency Analysis

By Moumita Mukherjee

1178

Open access peer-reviewed

15. Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

By Mahboobeh Mahmoodi and Lida Ghazanfari

2291

Open access peer-reviewed

16. Radiation Response of Silicon Carbide Diodes and Transistors

By Takeshi Ohshima, Shinobu Onoda, Naoya Iwamoto, Takahiro Makino, Manabu Arai and Yasunori Tanaka

2321

Edited Volume and chapters are indexed in

  • Worldcat
  • OpenAIRE
  • Google Scholar
  • AZ ebsco
  • Base
  • CNKI
  • IET Inspec

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