Open access peer-reviewed Edited Volume

Physics and Technology of Silicon Carbide Devices

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Academic Editor

Yasuto Hijikata
Yasuto Hijikata

Saitama University,
Japan

Published16 October 2012

Doi10.5772/3428

ISBN978-953-51-0917-4

eBook (PDF) ISBN978-953-51-6283-4

Copyright year2012

Number of pages414

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Table of Contents

Open access  chapters

2. Characterization of Defects Evolution in Bulk SiC by Synchrotron X-Ray Imaging

By T. S. Argunova, M. Yu. Gutkin, J. H. Je, V. G. Kohn and E. N. Mokhov

2,540
3. Ion Synthesis of SiC and Its Instability at High Temperatures

By Kair Kh. Nussupov and Nurzhan B. Beisenkhanov

2,193
4,195
5
7. Thermal Oxidation Mechanism of Silicon Carbide

By Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi and Sadafumi Yoshida

4,188
8
8. Materials and Processing for Gate Dielectrics on Silicon Carbide (SiC) Surface

By Sanjeev Kumar Gupta, Jitendra Singh and Jamil Akhtar

6,118
3
9. Fundamental Aspects of Silicon Carbide Oxidation

By Heiji Watanabe and Takuji Hosoi

4,693
7
12. Silicon Carbide Power MESFET

By Yintang Yang, Baoxing Duan and Xianjun Zhang

2,847
13. Applications of SiC-Based Thin Films in Electronic and MEMS Devices

By Mariana Amorim Fraga, Rodrigo Sávio Pessoa, Marcos Massi and Homero Santiago Maciel

4,322
16. Radiation Response of Silicon Carbide Diodes and Transistors

By Takeshi Ohshima, Shinobu Onoda, Naoya Iwamoto, Takahiro Makino, Manabu Arai and Yasunori Tanaka

3,728
4

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55,497 Total Chapter Downloads

7,696 Total Chapter Views

64 Crossref Citations

77 Web of Science Citations

143 Dimensions Citations

10 Altmetric Score

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