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HgCdTe Heterostructures Grown by MBE on Si(310) for Infrared Photodetectors

By Maxim Yakushev, Vasily. Varavin, Vladimir Vasilyev, Sergey Dvoretsky, Irina Sabinina,Yuri. Sidorov, Aleksandr Sorochkin and Aleksandr Aseev

Submitted: November 9th 2010Reviewed: April 6th 2011Published: July 29th 2011

DOI: 10.5772/20587

Downloaded: 1894

© 2011 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike-3.0 License, which permits use, distribution and reproduction for non-commercial purposes, provided the original is properly cited and derivative works building on this content are distributed under the same license.

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Maxim Yakushev, Vasily. Varavin, Vladimir Vasilyev, Sergey Dvoretsky, Irina Sabinina,Yuri. Sidorov, Aleksandr Sorochkin and Aleksandr Aseev (July 29th 2011). HgCdTe Heterostructures Grown by MBE on Si(310) for Infrared Photodetectors, Photodiodes Jeong-Woo Park, IntechOpen, DOI: 10.5772/20587. Available from:

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