Open access peer-reviewed chapter

Effects of Quantum-Well Base Geometry on Optoelectronic Characteristics of Transistor Laser

By Iman Taghavi and Hassan Kaatuzian

Submitted: November 5th 2010Reviewed: May 27th 2011Published: October 5th 2011

DOI: 10.5772/20001

Downloaded: 2133

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Iman Taghavi and Hassan Kaatuzian (October 5th 2011). Effects of Quantum-Well Base Geometry on Optoelectronic Characteristics of Transistor Laser, Optoelectronics - Devices and Applications, Padmanabhan Predeep, IntechOpen, DOI: 10.5772/20001. Available from:

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