Open access peer-reviewed chapter

Advances in Resistive Switching Memories Based on Graphene Oxide

By Fei Zhuge, Bing Fu and Hongtao Cao

Submitted: February 13th 2012Reviewed: July 3rd 2012Published: March 27th 2013

DOI: 10.5772/51260

Downloaded: 3818

© 2013 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to cite and reference

Link to this chapter Copy to clipboard

Cite this chapter Copy to clipboard

Fei Zhuge, Bing Fu and Hongtao Cao (March 27th 2013). Advances in Resistive Switching Memories Based on Graphene Oxide, New Progress on Graphene Research Jian Ru Gong, IntechOpen, DOI: 10.5772/51260. Available from:

Embed this chapter on your site Copy to clipboard

<iframe src="" />

Embed this code snippet in the HTML of your website to show this chapter

chapter statistics

3818total chapter downloads

1Crossref citations

More statistics for editors and authors

Login to your personal dashboard for more detailed statistics on your publications.

Access personal reporting

Related Content

This Book

Next chapter

Surface Functionalization of Graphene with Polymers for Enhanced Properties

By Wenge Zheng, Bin Shen and Wentao Zhai

Related Book

First chapter

DFT Calculation for Adatom Adsorption on Graphene

By Kengo Nakada and Akira Ishii

We are IntechOpen, the world's leading publisher of Open Access books. Built by scientists, for scientists. Our readership spans scientists, professors, researchers, librarians, and students, as well as business professionals. We share our knowledge and peer-reveiwed research papers with libraries, scientific and engineering societies, and also work with corporate R&D departments and government entities.

+3,550 Open Access Books

+57,400 Citations in Web of Science

+108,500 IntechOpen Authors and Academic Editors

+560,000 Unique visitors per month

More about us