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Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

By Daniela Munteanu, Jean-Luc Autran and Sébastien Martinie

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Published: July 18th 2011

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Daniela Munteanu, Jean-Luc Autran and Sébastien Martinie (July 18th 2011). Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation, Nanowires Abbass A. Hashim, IntechOpen, DOI: 10.5772/16827. Available from:

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