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High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method

By Kyoichi Kinoshita and Shinichi Yoda

DOI: 10.5772/28711

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Kyoichi Kinoshita and Shinichi Yoda (January 13th 2012). High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method, Modern Aspects of Bulk Crystal and Thin Film Preparation Nikolai Kolesnikov, IntechOpen, DOI: 10.5772/28711. Available from:

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