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High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method

By Kyoichi Kinoshita and Shinichi Yoda

Submitted: March 2nd 2011Reviewed: August 1st 2011Published: January 13th 2012

DOI: 10.5772/28711

Downloaded: 1200

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Kyoichi Kinoshita and Shinichi Yoda (January 13th 2012). High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method, Modern Aspects of Bulk Crystal and Thin Film Preparation, Nikolai Kolesnikov and Elena Borisenko, IntechOpen, DOI: 10.5772/28711. Available from:

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