Comparison of properties of GaN and InN microdisks.
Abstract
The high-quality GaN microdisks with InGaN/GaN quantum wells (QWs) and InN microdisks were grown on γ-LiAlO2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The samples were analysed using scanning electron microscopy, X-ray diffraction, photoluminescence, cathodoluminescence and high-resolution transmission electron microscope. The characteristics of the GaN microdisks and InN microdisks were studied and the effect of growth temperature was evaluated.
Keywords
- GaN
- InN
- microdisk
- molecular beam epitaxy
1. Introduction
III-nitride materials have been extensively studied for the applications to high-efficiency lighting sources such as light-emitting diodes (LEDs) or spintronics [1, 2, 3, 4, 5, 6, 7]. From the changing of indium content (
2. GaN hexagonal microdisks
2.1. Growth of GaN hexagonal microdisks
The sample was grown on a high-quality 1
2.2. Characteristics of GaN microdisks
The surface morphology of the GaN microdisk sample was evaluated by the field emission scanning electron microscopy (FE-SEM, SII-3050). Figure 2 shows SEM images with a tilted angle and a top-view of the sample, respectively. The morphology of the sample exhibited that a two-dimensional (2D)
The optical properties of the GaN microdisk sample were measured by photoluminescence spectroscopy (PL, HORIBA HR800) at room temperature with a light source of He-Cd 325 nm laser. We performed the laser beam focusing on two different spots (S1 and S2) and compared the results with the spot without any microdisk (i.e. mostly
The microstructure of the GaN microdisk sample was analysed by field emission transmission electron microscopy (FE-TEM) (Phillips, model Tecnai F-20) with an electron voltage of 200 kV. The cross-sectional TEM specimen of the sample was prepared by a dual-beam Focus Ion Beam system (FIB, Seiko Inc., SII-3050), on the cleavage plane along the [
3. InN hexagonal microdisks
3.1. Growth of InN hexagonal microdisks
The two-orientation growth of GaN nanopillars on the LAO substrate has been reported in our previous papers [13, 14] and reconfirmed in Section 2. In this section, we applied the two-orientation growth mechanism to grow the 2D
3.2. Characteristics of InN microdisks
The crystal structure of the InN microdisk sample was characterized by the high-resolution X-ray diffraction (XRD; Bede D1) measurement and is shown in Figure 5(a). From the result of X-ray diffraction pattern (i.e. the peak at
The surface morphology of the InN microdisk sample was evaluated by the field emission scanning electron microscopy (FE-SEM, SII-3050). Figure 5(b) shows the top-view SEM image of the sample, and the diameter of the InN microdisk was about 0.96 μm. The morphology of the sample exhibited that 2D
The microstructure of the sample was analysed by field emission transmission electron microscopy (FE-TEM) (Phillips, model Tecnai F-20) with an electron voltage of 200 kV. The cross-sectional TEM specimen of the sample was prepared by a dual-beam FIB system (Seiko Inc., SII-3050), on the cleavage plane along the [
Growth temperature | Growth mechanism (lateral over-growth) | Oblique angle | Application | |
---|---|---|---|---|
GaN microdisk | 620°C | One | 28° | Base for InGaN/GaN QW |
InN microdisk | 470°C | Six | 73° | Base for InGaN/GaN QW |
4. InGaN/GaN quantum well
4.1. Growth
The growth mechanism of the awl-shaped GaN microdisk is divergently self-assembled, indicating that the hexagonal neck area for initial nucleation between GaN microdisk and LAO substrate is very small (diameter ~100 nm), and the strain due to the lattice-mismatch between GaN and LAO substrate will not be delivered to the awl-shaped GaN microdisk at the top. This is the way that the GaN microdisk can be grown in balance with a good awl-shape of hexagonal disk. The experimental results revealed that the awl-shaped GaN microdisk exhibited a high-quality single crystal. Therefore, the awl-shaped GaN microdisk can be regarded as a nearly freestanding substrate (strain-free) to grow the In
4.2. Characteristics of InGaN/GaN microdisks
The surface morphology of the InGaN/GaN microdisk sample was evaluated by the field emission scanning electron microscopy (FE-SEM, SII-3050). Figure 7 shows SEM images with a tilted-angle view and a top view of the sample, respectively. The surface morphology of the sample was formed by the two-orientation growth mechanism. Comparing with the surface morphology of GaN microdisks, the shape of the as-grown InGaN/GaN DQW microdisks still maintains the hexagonal shape. Figure 7(f) shows the enlarged SEM image with a top view of the GaN hexagonal microdisk, which is shown in the centre of Figure 7(d), and the diameter of the centre GaN microdisk is about 1.96 μm.
The optical properties of the sample were measured by photoluminescence (PL, HORIBA HR800) at room temperature with a light source of He-Cd 325 nm laser. We performed the laser beam focusing on three different spots (S1–S3) and compared the results with the spot without any microdisk (i.e. mostly
An In
The microstructure of the In
5. Conclusion
We have grown GaN and InN hexagonal microdisks on the LAO substrates at low temperatures (GaN at 630°C and InN at 470°C) by PA-MBE. From the SEM images and TEM analyses, we found that 3D
Acknowledgments
The project was supported by the Ministry of Science and Technology of Taiwan and the Core Facilities Laboratory for Nanoscience and Nanotechnology in Kaohsiung and Pintung Area.
References
- 1.
Nakamura S, Senoh M, Iwasa N, Nagahama SI, Yamada T, Mukai T. Superbright green InGaN single-quantum-well-structure light-emitting diodes. Japanese Journal of Applied Physics. 1995; 34 (Part 2, Number 10B):L1332-L1335. DOI: 10.1143/JJAP.34.L1332 - 2.
Nakamura S, Pearton S, Fasol G, editors. The Blue Laser Diode. 2nd ed. The Complete Story. Springer ed. Berlin: Springer Science & Business Media; 2000. p. 367. DOI: 10.1007/978-3-662-04156-7 - 3.
Lo I, Tsai JK, Yao WJ, Ho PC, Tu LW, Chang TC, Elhamri S, Mitchel WC, Hsieh KY, Huang JH, Huang HL, Tsai WC. Spin splitting in modulation-doped Al x Ga1−x N/GaN heterostructures. Physics Review B. 2002;65 (16):161306. DOI: 10.1103/PhysRevB.65.161306 - 4.
Lo I, Wang WT, Gau MH, Tsai JK, Tsay SF, Chiang JC. Gate-controlled spin splitting in GaN/AlN quantum wells. Applied Physics Letters. 2006; 88 :082108. DOI: 10.1063/1.2178505 - 5.
Lo I, Hsieh CH, Hsu YC, Pang WY, Chou C. Self-assembled GaN hexagonal micropyramid and microdisk. Applied Physics Letters. 2009; 94 :062105. DOI: 10.1063/1.3079078 - 6.
Fred Schubert E, Kim JK. Solid-state light sources getting smart. Science. 2005; 308 (5726):1274-1278. DOI: 10.1126/science.1108712 - 7.
Ponce FA, Bour DP. Nitride-based semiconductors for blue and green light-emitting devices. Nature. 1997; 386 (6623):351-359. DOI: 10.1038/386351a0 - 8.
Vurgaftman I, Meyer JR. Band parameters for nitrogen-containing semiconductors. Journal of Applied Physics. 2003; 94 :3675. DOI: 10.1063/1.1600519 - 9.
Madelung O, editor. Semiconductors: Group IV Elements and III–V Compounds. New York: Spring; 1991. p. 163. DOI: 10.1007/978-3-642-45681-7 - 10.
El-Masry NA, Piner EL, Liu SX, Bedair SM. Phase separation in InGaN grown by metalorganic chemical vapor deposition. Applied Physics Letters. 1998; 72 :40. DOI: 10.1063/1.120639 - 11.
Tsai JK, Lo I, Chuang KL, Tu LW, Huang JH, Hsieh CH, Hsieh KY. Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy. Journal of Applied Physics. 2004; 95 :460. DOI: 10.1063/1.1634388 95: 460 - 12.
Lo I, Wang YC, Hsu YC, Shih CH, Pang WY, You ST, Hu CH, Chou MMC, Hsu GZL. Electrical contact for wurtzite GaN microdisks. Applied Physics Letters. 2014; 105 (8):082101. DOI: 10.1063/1.4894080 - 13.
Hsieh CH, Lo I, Gau MH, Chen YL, Chou MC, Pang WY, Chang YI, Hsu YC, Sham MW, Chiang JC, Tsai JK. Self-assembled c-plane GaN nanopillars on γ-LiAlO2 substrate grown by plasma-assisted molecular-beam epitaxy. Japanese Journal of Applied Physics. 2008; 47 (2R):891. DOI: 10.1143/JJAP.47.891 - 14.
Lo I, Hsieh CH, Chen YL, Pang WY, Hsu YC,Chiang JC, Chou MC, Tsai JK, Schaadt DM. Line defects of M-plane GaN grown on g-LiAlO2 by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2008; 92 :202106. DOI: 10.1063/1.2924288 - 15.
Reshchikov MA, Morkoc HJ. Luminescence properties of defects in GaN. Journal of Applied Physics. 2005; 97 :061301. DOI: 10.1063/1.1868059 - 16.
Yang CC, Lo I, Hu CH, Huang HC, Chou MMC. Growth of InN hexagonal microdisks. AIP Advances. 2015; 6 :085015. DOI: 10.1063/1.4961699 - 17.
Denton AR, Ashcroft NW. Vegar’s law. Physical Review A. 1991; 43 (6):3161. DOI: 10.1103/PhysRevA.43.3161 - 18.
Hsu YC, Lo I, Shih CH, Pang WY, Hu CH, Wang YC, Tsai CD, Chou MMC, Gary Z. Green light emission by InGaN/GaN multiple-quantum-well microdisks. Applied Physics Letters. 2014; 104 :102105. DOI: 10.1063/1.4868417 - 19.
Vegard L. Die Konstitution der Mischkristalle und die Raumfüllung der Atome. Zeitschrift Fur Physik. 1921; 5 :17-26. DOI: 10.1007/BF01349680 - 20.
Choi S, Ton-That C, Phillips MR, Aharonovich I. Observation of whispering gallery modes from hexagonal ZnO microdisks using cathodoluminescence spectroscopy. Applied Physics Letters. 2013; 103 :171102. DOI: 10.1063/1.482648s1