Open access peer-reviewed chapter

InAs Quantum Dots of Engineered Height for Fabrication of Broadband Superluminescent Diodes

By S. Haffouz and P.J. Barrios

Submitted: April 28th 2011Reviewed: January 30th 2012Published: June 13th 2012

DOI: 10.5772/34209

Downloaded: 1488

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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S. Haffouz and P.J. Barrios (June 13th 2012). InAs Quantum Dots of Engineered Height for Fabrication of Broadband Superluminescent Diodes, Fingerprints in the Optical and Transport Properties of Quantum Dots Ameenah Al-Ahmadi, IntechOpen, DOI: 10.5772/34209. Available from:

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