Open access peer-reviewed chapter

Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch

By Xing-you Chen, Yi Gu and Yong-gang Zhang

Submitted: November 7th 2016Reviewed: June 30th 2017Published: March 7th 2018

DOI: 10.5772/intechopen.70259

Downloaded: 144

© 2018 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Xing-you Chen, Yi Gu and Yong-gang Zhang (March 7th 2018). Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch, Epitaxy Miao Zhong, IntechOpen, DOI: 10.5772/intechopen.70259. Available from:

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