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The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films

By Kai-Huang Chen, Chien-Min Cheng, Sean Wu, Chin-Hsiung Liao and Jen-Hwan Tsai

Submitted: April 24th 2012Reviewed: August 8th 2012Published: November 19th 2012

DOI: 10.5772/52203

Downloaded: 1229

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Kai-Huang Chen, Chien-Min Cheng, Sean Wu, Chin-Hsiung Liao and Jen-Hwan Tsai (November 19th 2012). The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films, Advances in Ferroelectrics Aimé Peláiz Barranco, IntechOpen, DOI: 10.5772/52203. Available from:

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