Open access peer-reviewed Edited Volume

Advanced Material and Device Applications with Germanium

Edited by Sanghyun Lee

Indiana State University, United States of America

Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium is poised to make a remarkable comeback in the semiconductor industry. With this increasing attention, this book describes the fundamental aspects of germanium and its applications. The contributing authors are experts in their field with great in-depth knowledge. The authors strongly feel that this contribution might be of interest to readers and help to expand the scope of their knowledge.

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Advanced Material and Device Applications with GermaniumEdited by Sanghyun Lee

Published: October 3rd 2018

DOI: 10.5772/intechopen.73146

ISBN: 978-1-78984-032-2

Print ISBN: 978-1-78984-031-5

eBook (PDF) ISBN: 978-1-83881-724-4

Copyright year: 2018

Books open for chapter submissions

1261 Total Chapter Downloads

1 Crossref Citations

1 Dimensions Citations

chaptersDownloads

Open access peer-reviewed

1. Introductory Chapter: Advanced Material and Device Applications with Germanium

By Sanghyun Lee

196

Open access peer-reviewed

2. Germanium: Current and Novel Recovery Processes

By Aixa González Ruiz, Patricia Córdoba Sola and Natalia Moreno Palmerola

457

Open access peer-reviewed

3. Phosphorus and Gallium Diffusion in Ge Sublayer of In0.01Ga0.99As/In0.56Ga0.44P/Ge Heterostructures

By Kobeleva Svetlana Petrovna, Iliya Anfimov and Sergey Yurchuk

162

Open access peer-reviewed

4. Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part One

By Adrian Habanyama

270

Open access peer-reviewed

5. Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part Two

By Adrian Habanyama

178

Edited Volume and chapters are indexed in

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  • AZ ebsco
  • Base
  • CNKI

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