Silicon Carbide - Materials, Processing and Applications in Electronic Devices, ISBN: 978-953-307-968-4

The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

By Kair Kh. Nussupov and Nurzhan B. Beisenkhanov

DOI: 10.5772/22256

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