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Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics

Written By

Moumita Mukherjee

Submitted: 10 June 2010 Published: 04 April 2011

DOI: 10.5772/15537

From the Edited Volume

Properties and Applications of Silicon Carbide

Edited by Rosario Gerhardt

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Written By

Moumita Mukherjee

Submitted: 10 June 2010 Published: 04 April 2011