Open access peer-reviewed Edited Volume

Advanced Silicon Carbide Devices and Processing

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Academic Editor

Stephen Saddow
Stephen Saddow

University of South Florida,
United States of America

Co-editor

Published17 September 2015

Doi10.5772/59734

ISBN978-953-51-2168-8

eBook (PDF) ISBN978-953-51-6385-5

Copyright year2015

Number of pages258

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Edited Volume and chapters are indexed in

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  • OpenAIRE
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Table of Contents

Open access  chapters

1. Silicon Carbide in Microsystem Technology — Thin Film Versus Bulk Material

By Mariana Amorim Fraga, Matteo Bosi and Marco Negri

3,228
10
2. 3C-SiC — From Electronic to MEMS Devices

By Jean-François Michaud, Marc Portail and Daniel Alquier

3,060
2
3. Impact of Dielectric Formation and Processing Techniques on the Operation of 4H-SiC MOSFETs

By Lucy Martin, Hua-Khee Chan, Ming-Hung Weng and Alton Horsfall

2,035
1
4. Investigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry

By Sadafumi Yoshida, Yasuto Hijikata and Hiroyuki Yaguchi

2,341
2,740
6. Novel Developments and Challenges for the SiC Power Devices

By Yintang Yang, Baoxing Duan, Song Yuan and Hujun Jia

2,728
1
7. Silicon Carbide Based Optical Nonlinear Waveguide Device

By Gong-Ru Lin, Chung-Lun Wu, Chih-Hsien Cheng and Yung-Hsiang Lin

54
9. Silicon Carbide for Novel Quantum Technology Devices

By Stefania Castelletto, Lorenzo Rosa and Brett C. Johnson

2,650
7

IMPACT OF THIS BOOK AND ITS CHAPTERS

20,952 Total Chapter Downloads

3,574 Total Chapter Views

41 Crossref Citations

50 Web of Science Citations

81 Dimensions Citations

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