InTech - Open Access Publisher

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day Peizhen Yang, W.S. Lau, Seow Wei Lai, V.L. Lo, S.Y. Siah and L. Chan

Bookmark and Share

    Tweet

     

How to Reference

To reference this article in your paper, please copy and paste the following text:

How to Link

To place a link on your website or a blog, please copy and paste the following HTML code:

Related Articles

• Self-Aligned π-Shaped Source/Drain Ultrathin SOI MOSFETs
• CMOS Voltage and Current Reference Circuits consisting of Subthreshold MOSFETs – Micropower Cir...
• Tectonic Escape Mechanism in the Crustal Evolution of Eastern Anatolian Region (Turkey)
• Source and Drain Junction Engineering for Enhanced Non-Volatile Memory Performance
• Stabilization of Networked Control Systems with Input Saturation
• Influence of Degree of Saturation in the Electric Resistivity-Hydraulic Conductivity Relationship
• Global Asymptotic Stability of the Classical PID Controller by Considering Saturation Effects in ...
• Tunable Analog and Reconfigurable Digital Circuits with Nanoscale DG-MOSFETs
• Artificial Neural Network Applied for Detecting the Saturation Level in the Magnetic Core of a We...
• Silicon-Based Nanowire MOSFETs: From Process and Device Physics to Simulation and Modeling
• Marine Tidal Current Electric Power Generation: State of Art and Current Status
• Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Hea...